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PD - 96127A
IRF7404QPbF
HEXFET ? Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
S
S
G
1
2
3
4
8
7
6
5
A
D
D
D
D
V DSS = -20V
R DS(on) = 0.040 ?
Top View
Description
These HEXFET ? Power MOSFET's in package
utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET
Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
Absolute Maximum Ratings
SO-8
Parameter
Max.
Units
I D @ T A = 25°C
10 Sec. Pulsed Drain Current, V GS @ -4.5V
-7.7
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
???
50
°C/W
www.irf.com
1
08/09/10
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